ALLIANCE PARTNERS
GaAs Foundries
Cree | RFMD | Global Communications Semiconductors | Northrop Grumman Space Technology | OMMIC | TriQuint Semiconductor | United Monolithic Semiconductors | WIN Semiconductors
Cree Inc.
Cree, Inc. is a market-leading innovator and manufacturer of semiconductors that enhance the value of LED solid-state lighting, power and communications products by significantly increasing their energy performance. Key to Cree’s market advantage is unrivaled materials expertise in silicon carbide (SiC) with gallium nitride (GaN) to deliver chips and packaged devices that can handle more power in a smaller space while producing less heat than other available technologies, materials and products.
RF Micro Devices (RFMD) is a global leader in the design and manufacture of high-performance radio frequency systems and solutions. RFMD's cellular front ends, cellular transceivers, RF components and system- on-chip (SoC) solutions enable worldwide mobility, provide enhanced connectivity and support advanced functionality in the cellular handset, cellular base station, wireless local area network (WLAN), CATV networking, aerospace, defense, and global positioning systems (GPS) markets. Recognized for its diverse portfolio of state-of-the-art semiconductor technologies and vast RF systems expertise, RFMD is a preferred supplier to the world's leading mobile device and RF equipment manufacturers.
Global Communications Semiconductors
Global Communications Semiconductors, Inc. (GCS) is the Leading compound semiconductor foundry service provider for wireless telecommunication, high-speed networking, optoelectronics and automotive industries. GCS offers a variety of processes to meet your design needs. Their baseline processes include GaAs based HBT and PHEMT technologies, which are ideal to meet most requirements for wireless, high speed optics and millimeter-wave applications.
Northrop Grumman Space Technology
Northrop Grumman's Velocium Products is a leader in the design and fabrication of high speed components for established and emerging commercial markets, including cellular and broadband wireless systems as well as aerospace, defense and scientific applications. Velocium Products also offers foundry services that utilize advanced indium phosphide (InP) and gallium arsenide (GaAs) semiconductor manufacturing processes from Northrop Grumman Space Technology sector (NGST).
OMMIC is a new company but with a long history of innovation and over 30 years of expertise in GaAs technology. Formerly known as Philips Microwave Limeil (PML), OMMIC was created in January 2000 with the mission to focus on III-V activities. This change has enabled OMMIC to fully develop activities in innovative III-V Integrated Circuits (ICs) and epitaxial material. OMMIC is developing new techniques for epitaxial wafer production, advanced PHEMT and MHEMT technologies as well as innovative circuits for 40 Gb/s and new generation wireless standards.
Working with TriQuint gives you access to high-performance GaAs process technologies. But more importantly, it puts you in personal contact with TriQuint's expert staff, who are experienced in guiding customers through design into finished IC products. For the design phase, we provide the tools, training and support you need to design your circuit and to accelerate your time-to-market.
United Monolithic Semiconductors
UMS offers a broad expertise background and knowledge to customers. Each process is supported by an extensive data base of measurements and reliable models. Complete design kits describe the process, the characteristics of the devices and their electrical and physical parameters variation.
WIN has recruited a founding team that brings more than 200 man-years of experience in GaAs pHEMT and HBT MMIC fabrication. This team is familiar with the latest developments in GaAs technology and will provide continuous research and development to meet our customers' technology requirements. WIN will develop and provide microwave device technologies that cover the frequency spectrum from the baseband to 100 GHz. These HBT and pHEMT devices can serve many popular and rapidly growing markets.
